| 摘要 |
PURPOSE:To improve the integration of a semiconductor injection integrated logic circuit device by forming an upper diffused layer after a lower diffused layer is raised by more than half of the thickness of an epitaxial layer to form the upper diffused layer in a shallow depth, thereby suppressing the lateral diffusion. CONSTITUTION:A lower diffused layer 4 is raised in advance by more than half of the thickness of an epitaxial layer 5 to be diffused, a low density base region 6 is simultaneously driven in, and an upper diffused layer 7 is then formed. Since the layer 4 is diffused by raising it more than half of the thickness of the layer 5, the layer 7 is formed in a shallow depth to suppress the lateral diffusion, thereby improving the integration. Since the region 6 is driven in simultaneously with the layer 4, it can be sufficiently deeply formed to obtain predetermined characteristics. |
