| 摘要 |
PURPOSE:To reduce a leak current, make formation easy, and enable high speed response due to small capacitance, by arranging a first electrode right above a resonator via at least a clad layer and arranging a second electrode outside the end surface of one side of the resonator. CONSTITUTION:Layers 101-105 are subjected to a stripe-type mesa etching. A p-InP layer as a buried layer is grown and buried on the both sides and the upper part of a mesa. The following layers are eliminated such that the edge surface of one side of a resonator is exposed maintaining a specified length of the resonator; the p-InP layer 106 as a buried layer, a p-InP layer 105 as a clad layer, an InGaAsP layer 104 as an active layer and an n-InGaAsP layer 103 as a guide layer. On the eliminated part, an n-InP layer 107 as a buried layer for end part is grown. Then, leaving a stripe width, nicks 108 and 109 are formed on the edge surface of the resonator. A titanium/platinum/ gold layer 110 as a p-side electrode is formed on the p-InP layer 106, and a gold/tin/gold layer 111 as an n-side electrode is formed on an n-InP layer 107. Thereby, the most part of a current flows in the active layer, so that the leak current can be restrained to a small amount. |
