| 摘要 |
PURPOSE:To take out the emitted light from a semiconductor laser in the vertical direction to a substrate by a method wherein the semiconductor laser is positioned in such a way that the emitted light is reflected by slant faces for reflection and is emitted in the nearly vertical direction to the substrate. CONSTITUTION:A substrate 20 having a partially removed mask layer and consisting of an anisotropic etching material is etched through the removed part of the mask layer 20 by an anisotropic etching technique to form slant faces 28 for reflection in a recessed part 24 for semiconductor laser installation. Then, a semiconductor laser 26 is installed in the recessed part 24. At that time, the semiconductor laser 26 is positioned in such a way that the emitted light from the semiconductor laser 26 is reflected by the slant faces 28 for reflection and is emitted in the nearly vertical direction to the substrate 20.
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