| 摘要 |
PURPOSE:To form thin films of target metals having excellent characteristics on substrates to be treated by forming metallic targets in a sputtering device to a non-flat plate shape, disposing the plural targets to an annular shape and rotatably providing a counter electrode coaxially attached with the substrates to be treated to the outside periphery thereof. CONSTITUTION:Plural sheets of the non-flat plate-shaped metallic targets 17 each having a projecting or recessed shape are combined and are formed to the central part of a vacuum vessel in such a manner that the section thereof forms the square or polygonal annular shape. A holder 15 attached with the substrates to be treated is disposed to the outside thereof. After the inside of the vacuum vessel 11 is evacuated to a vacuum by an evacuation system 12, a treating gas such as Ar, O2, N2 or H2 is introduced from a gas introducing device 13 into the vacuum vessel. A high voltage is impressed to the targets 17 and the holder 15 as the counter electrode by a power source 19 to generate a discharge and the targets are bombarded by the ionized gaseous Ar, etc. The target materials splashed from the targets 17 in this stage are made to collide against the surfaces of the substrates 14 on the rotating holder 15. The thin films of the target materials having excellent compressive stress are thus uniformly formed on the substrates. |
