发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To miniaturize the titled device by making pattern electrodes of an insulation type heat dissipation substrate a multilayer one. CONSTITUTION:The positive side 2 and the negative side 3 of a direct current input are formed as the first layer and the pattern electrodes of base electrodes 4a-4c, 5a-5c and three-phase current outputs 6a-6c are laminated with an insulation layer on the pattern electrodes formed on the first layer. That is, an aluminum foil 2 laminated on a copper foil 7 which is also laminated on an insulation layer 1 of an epoxy series resin baked on an aluminum substrate 8 forms the first pattern electrodes. Then, the insulation layer 1, the copper foil 7 and the aluminum foil 2 are laminated in the same way with the first pattern electrodes on the first pattern electrodes and base signal regions 4a-4c, 5a-5c and the three-phase current outputs 6a-6c are formed.</p>
申请公布号 JPS62202549(A) 申请公布日期 1987.09.07
申请号 JP19860044661 申请日期 1986.02.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 ARAI NORIYOSHI
分类号 H01L25/07;H01L23/14;H01L25/18 主分类号 H01L25/07
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