发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the intrusion of a metal used for forming a current path into a groove by a method wherein the deep groove is flattened by an insulator, the current path is shaped, a plating electrode is formed and the insulator is removed. CONSTITUTION:A gate metal 1 is annexed into a recess, the recess is coated with an insulating film 2, and openings are bored and ohmic metals 3 are attached. The insulating film 2 shapes deep grooves among the gate metals 3 and the side surfaces of the recess at that time. Polyimide 4 is applied to flatten the grooves, and other sections are removed, leaving only the recessed section. A metallic thin layer 5 is formed through a sputtering method, and a current path for plating is shaped. Accordingly, the intrusion of a metal employed for forming the current path into the grooves is prevented.
申请公布号 JPS62196823(A) 申请公布日期 1987.08.31
申请号 JP19860039797 申请日期 1986.02.24
申请人 NEC CORP 发明人 KUBOTA SUSUMU
分类号 H01L21/288 主分类号 H01L21/288
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