| 摘要 |
<p>A device and method for sputtering dielectric targets, for reactive sputtering, and for sputter etching, including a target (T), anode (A) and auxiliary electrode (ST) where each of the foregoing elements is electrically isolated from a grounded chamber containing a plasma and during a sputtering cycle, the anode (A) and target (T) are connected across a first floating power supply (PRF1) which applies a first series of waveforms to the target (T) to render the target (T) positive with respect to the plasma and thus sputter it and during a charge removal cycle, the auxiliary electrode (ST) and target (T) are connected across a second floating power supply (PRF2) which applies to the target (T) a second series of waveforms during respective intervals between the first series of waveforms to render the target (T) negative with respect to the plasma and thus remove any positive charge build up which may have occurred during the sputtering cycle.</p> |
