| 摘要 |
PURPOSE:To form a silicon/aluminum thin film to be subjected to anodization for the formation of a wiring pattern by a method wherein spattering is employed for the successive formation of a silicon thin film and a first aluminum thin film on a semiconductor substrate and then the entirety is allowed to cool before a second aluminum thin film is applied. CONSTITUTION:A semiconductor substrate 1 provided with an insulating film 2 is installed in a spattering unit, the semiconductor substrate 1 is heated, and then a thin silicon film 3 and thick first aluminum film 5 are formed by spattering on the entire upper surface of the semiconductor substrate 1. In a following process, the entirety is retained in the evacuated spattering unit and the substrate temperature is left or forced to cool down to 100 deg.C or lower. A thin second aluminum film 6 is attached and, in a first anodization process, its entire surface is converted into an alumina film 7. In this process, it is so arranged that the alumina film 7 may not be so thick as to reach the first aluminum film 6. A process follows wherein a photoresist 8 serves as a mask in a second anodization process wherein unnecessary portions are converted into an alumina film 9 and silicon oxide film 10 for the formation of a wiring pattern.
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