| 摘要 |
PURPOSE:To obtain a high quality multilayer thin film crystal having desired composition by forming a reaction pipe with a growth chamber for growth reaction and a purge chamber for purging a growth thin film or substrate, allowing movement of substrate heating board between the growth chamber and purge chamber and providing a transfer mechanism for transferring substrate heating board. CONSTITUTION:For the first layer, H2 with flow rate of 20cc/min of TMG, H2 with flow rate of 40cc/min, AsH3 with flow rate of 300cc/min, H2Se (hydrogen selenide) with flow rate of 50cc/min of TMA are supplied, in the total flow of H2 of 7l/min, from the reaction gas supply pipe 3 at the substrate temperature of 700 deg.C and the vapor growth is realized by allowing such mixed gas to be supplied into the surface. When desired thickness is obtained, the control valves of TMG, TMA are closed to suspend supply of gas, the control valve for injecting H2 gas from a guide pipe 9 is opened and thereby H2 gas is injected to a susceptor 6 from the nozzle. The susceptor 6 moves upward with a pressure of H2 gas and is engaged with a window provided at the boundary between the growth chamber 11 and purge chamber 12. In the purge chamber, AsH3 is supplied in the flow rate of 300cc/min and H2 is supplied in the total flow rate of 7l/min from the gas supply pipe 7 for purging for purging a growth film.
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