| 摘要 |
PURPOSE:To obtain an optical bistable element which operates with low light power and can make high-speed operation by changing the voltage to be impressed to a quantum well structural part incorporated into the element at a high speed by the irradiation of low-power light thereby changing the light transmission characteristic of the quantum well structural part. CONSTITUTION:A GaAs substrate 10 of an N-type is used and an AlxGa1-xAs layer 11 of an N-type, AlxGa1-xAs layer 12 of a P-type, multiple quantum well layer 13 of the P-type, AlxGa1-xAs layer 14 of the N-type and AlxGa1-xAs layer 15 of the P-type are successively laminated thereon. The multiple quantum well layer 13 is formed by alternately laminating 25 periods of the GaAs layers 131 and the AlxGa1-xAs layers 132. The surfaces of the layers 12-15 and the layers 11 are partly removed except a cylindrical part 10 of about 40mum radius with the center coinciding with the center of the circular hole part 18 of the substrate 10 by etching the layers from the top surface down to the N-type layer 11. The element obtd. in such a manner exhibits optical bistability and the high-speed operation of >=2 digits at <=1ns switching speed is obtd. |
