Phase change storage cells for memory devices, memory devices having phase change storage cells and methods of forming the same

摘要

Storage cells for a phase change memory device and phase change memory devices are provided that include a first phase change material pattern and a first high-resist phase change material pattern on the first phase change material pattern. The first high-resist phase change material pattern has a higher resistance than the first phase change material pattern. Methods of fabricating such storage cells and/or memory devices are also provided.