| 摘要 |
PURPOSE:To fine an element without exerting no bad influence on an operation for casting away an excess charge to a semiconductor substrate by forming to obtain the shallower diffusion depth of the first diffusion layer than that of the second diffusion layer, or an equal depth. CONSTITUTION:The light which is made incident through an opening part 7 from outside is photoelectrically transduced and a generated signal charge is accumulated in a photodetecting and accumulating part 2. The signal charge accumulated for a time is transferred to a charge read-out part 3 when a prescribed voltage is impressed to a gate electrode 4. An excess electron which is generated in case the incident light is intense is discareded to a semiconductor substrate 1 through the second diffusion layer 29 having low impurity density. Also, although the first diffusion layer 28 is shallow still its impurity density is high enough to prevent the signal charge from leaking to the semiconductor substrate 1 from a charge read-out part 3. |
