| 摘要 |
PURPOSE:To prevent the decrease of the insulation resistance between a magneto-resistance effect element and thin metallic film by forming a thin insulator film on the 1st thin metallic film formed by etching for the purpose of impressing a magnetic bias then forming the magneto-resistance effect element by etching in a manner as to overlap on the etching taper of at least the 1st thin metallic film. CONSTITUTION:After a bias film 2 is formed by sputtering or vapor deposition, the film is etched to a prescribed shape and the thin insulator film SiO2 3 is formed by sputtering. The MR element 4 is formed by dry etching with a resist pattern 5 as a mask so as to overlap on the etching taper of the bias film 2 in the formation of said element. The thin insulator film 3 on the etching taper of the bias film 2 is thoroughly protected from the over etching if the head is constructed in the above-mentioned manner. The electrical contact with the bias film 2 is thus obviated even if an electrode 7 is formed.
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