| 摘要 |
PURPOSE:To reduce the base resistance and the junction capacity of the base of a transistor by forming base electrode wirings through an electric insulator on emitter electrode wirings to reduce a distance between electrode leading holes. CONSTITUTION:A P-type base region 2 and an N-type emitter region 3 are formed in an N-type epitaxial layer 1 region. After a silicon oxide film 4 on a substrate and an emitter electrode leading hole 5 are then formed, it is covered with an aluminum to form an emitter electrode electrode wirings 6. Further, a silicon oxide film 7 is formed, a base electrode leading hole 8 is then formed, and it is covered with an aluminum to form base electrode wirings 9. In other words, the base wirings are formed through an insulating film on the emitter wirings. Thus, a distance A between the hole 5 and the hole 8 can be shortened.
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