| 摘要 |
PURPOSE:To dope an impurity in free degree of wide range of concentration by substituting a common element which constitutes the hetero junction plane superposed with two or more kinds of compound thin film semiconductor layers with another impurity element which is in a different group from the group of the common element in the periodic table. CONSTITUTION:The first and the second III-V group compound semiconductor layers 1 and 2 of each several atom layers or less, e.g., a two atom layer AlAs semiconductor layer 1 and a two atom layer GaAs semiconductor layer 2 which has common element As are superposed with one or more layers respectively and a USTL structure semiconductor layer 3 which forms a hetero junction plane JH between the layers 1 and 2 is constituted. An impurity is doped during the vapor growth of each layer 1, 2. For the impurity, VI group element Se with substitutes the common V group element As is uniformly doped and H2Se is used for an impurity source. The Se-doped UTSL semiconductor layer 3 vapor-grown in this way shows an n-type and can be doped in a wide range.
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