JFET imager having light sensing inversion layer induced by insulator charge

摘要

A solid state imaging element includes a semiconductor body consisting of a substrate of n+ conductivity type forming a drain region and of an epitaxial layer of n- conductivity type. In a surface of the epitaxial layer is a source region of n+ conductivity type and a signal storage gate region of p+ conductivity type. A transparent insulating film is provided on the signal storage gate region and on a portion of the surface of the epitaxial layer adjoining the signal storage gate region. A transparent gate electrode is provided on the insulating layer. Photocarriers generated in a depletion layer under the surface portion of the epitaxial layer by a light, which is incident through the transparent gate electrode and the transparent insulating layer, are stored in an inversion layer formed by a given bias voltage applied to the gate electrode.