发明名称 MANUFACTURE OF SOLAR CELL
摘要 PURPOSE:To improve the photoelectric effect of a solar cell further while various advantages, such as workability, waterproofness, light resistance, etc. are utilized by conducting baking forming a P-type semiconductor layer by CdTe in an inert gas atmosphere containing not more than 1mol% oxygen. CONSTITUTION:An atmosphere in which not more than 1mol% oxygen to the usage of an inert gas (nitrogen gas) is contained to said inert gas is manufactured, and baking shaping a P-type semiconductor layer at the formation of the P-type semiconductor layer in a solar cell layer is conducted in the atmosphere. Oxygen atoms enter into the crystal lattice of CdTe from the viewpoint of crystal size, the electron density of said CdTe is lowered, and the state in which one valence electron is insufficient, the state in which a hole is generated, is brought. That is, oxygen atoms function as an acceptor for supplying holes, and positively change said CdTe into a P-type. When not less than 1mol% oxygen is mixed in the inert gas, there is possibility in which the excess oxygen, on the contrary, oxidizes CdTe.
申请公布号 JPS62171166(A) 申请公布日期 1987.07.28
申请号 JP19860012513 申请日期 1986.01.23
申请人 INAX CORP 发明人 NISHIKAWA TAKESHI
分类号 H01L31/04 主分类号 H01L31/04
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