| 摘要 |
PURPOSE:To remarkably improve the yield rate as well as to obtain a firm connection of the title film carrier by a method wherein a protruded electrode is formed and a transfer is performed using a separate substrate, the tip of the protruded electrode is formed into a pyramid or delta shape, and the oxide film on an aluminum electrode is broken when the protruded electrode is connected to the aluminum electrode located on a semiconductor device. CONSTITUTION:A window 37 is provided on the protruded electrode and a protective film 36 is formed. When a metal film 35 is used as an electrode on one side and a gold plating is performed, a protruded electrode is formed as shown by 38 in the diagram. Then, a gold-tin alloy is formed by having the film carrier 39 of the tin-plated copper lead positioned on the protruded electrode 38 and an alloy of gold and tin is formed by applying heat and pressure a protruded electrode 40 is separated from the substrate and comes in contact with the lead side of the film carrier 39. The electrode 43 on the semiconductor device 42 and the lead point 41 are positioned with each other and bonded by applying heat and pressure. |
