| 摘要 |
PURPOSE:To improve the crystallizing activity of a generated molecular beam and to accurately control the molecular beam dose by disposing a compound of a raw material or a material for forming the compound with the raw material at a position contacted with the gas of the raw material evaporated from an evaporation source and directed toward a substrate, and heating the compound or the material at a predetermined temperature to accelerate the thermal decomposition of the thermally decomposing unit of the source to lower a predetermined thermal decomposition temperature. CONSTITUTION:An As (raw material) 2 contained in a crucible 1 is heated by a heater 3, evaporated to become an As4 molecular beam, which is introduced through a pipe 11 to a thermally decomposing unit 8. A GaAs 10 is charged in the extension of the pipe 11 in the unit 8. Since the unit 8 is heated to approx. 600 deg.C, As2 molecules are evaporated from the surface of the GaAS 10 to generate a molecular beam of the As2. Since the As on the surface of the GaAs is consumed, the Ga surface is exposed, but the As4 molecules supplied from the crucible 1 is absorbed to the Ga surface to hold the GaAs composition. This reaction is continued to efficiently generate the As2 molecules even at low thermally decomposing temperature.
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