发明名称 PREPARATION OF ELECTRIC FIELD EFFECT TYPE SEMICONDUCTOR SENSOR
摘要 PURPOSE:To make it possible to prevent the delamination of a polymer film over a long period of time, by forming an org. membrane on a gate insulating film and introducing an optically active group into the org. membrane by the reaction with the functional group introduced into the org. membrane. CONSTITUTION:An org. membrane 15 is formed on a gate insulating film 14 and, after a functional group 16 was introduced into the org. membrane 15, an optically active group is introduced into the org. membrane. After an uncured polymer material applied to the org. membrane 15, the optically active group is irradiated with light to form a highly reactive intermediate which is, in turn, reacted with the polymer material to form a cured polymer film 18. Because the formed intermediate has extremely high reactivity, strong bond can be formed between the intermediate and the polymer material and, even when a chemically stable polymer material is used, film delamination can be prevented over a long period of time.
申请公布号 JPS62163960(A) 申请公布日期 1987.07.20
申请号 JP19860005584 申请日期 1986.01.14
申请人 OLYMPUS OPTICAL CO LTD 发明人 OSADA TAIJI;ONO NORIAKI;SHINOHARA ETSUO;TAKAHASHI FUKUKO;WATANABE NOBUYUKI
分类号 G01N27/414;G01N27/30 主分类号 G01N27/414
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