| 摘要 |
PURPOSE:To improve a C/N by forming a rare earth-transition metal alloy film on a substrate in a preheated state. CONSTITUTION:A thin AIN film 2 is formed by vapor deposition, sputtering, etc., on the glass substrate 1 to provide the underlying layer which is kept in a 100-350 deg.C range. A thin GdTbCo film is formed by vapor deposition on such underlying layer in said temp. state. The setting in the above-mentioned temp. range is not necessary in the subsequent stage of forming the AlN film 4 and Al film 5. The GbTbCo composed of (Gd75Tb25)100-xCox... where figures are atom%, X=75-85, is used.
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