| 摘要 |
PURPOSE:To reduce the inferiority rate of resist patterns formed on base plates, by chamfering he peripheral edge of the base plate. CONSTITUTION:Appropriate tapered sections are formed at the peripheral part of a base plate 1. Because of the tapered sections, the build-up a resist film 2 which is usually seen in this part in conventional ones is effectively eliminated and the close adherence between a photomask 3 and resist film 2 can be improved over the entire surface. Therefore, when a highly viscous liquid, such as the photoresist 2, PIQ, etc., is applied to the base plate 1 under a rotational condition, the build-up of the liquid in the peripheral section of the base plate 1 can be reduced.
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