| 摘要 |
PURPOSE:To form more inner gates than conventional gates by removing a buffer region, and composing a buffer circuit of a transistor existing in an inner gate region. CONSTITUTION:A circuit device is composed only of an array region 1 of a transistor. In the region 1, rows of P-type and N-type MOS transistors are alternately arranged. Pads for connecting with packages, and input or output buffers for bonding between a logic gate composed in the region 1 and an external circuit are formed of the MOS transistors of the region 1. Then, the buffer region which is necessary in a conventional transistor array is substituted for the region 1. Thus, more inner gates than the conventional gates are formed. |
