| 摘要 |
PURPOSE:To make the titled device small in size, and to realize a low power and a high speed response by forming a vibrating reed and a monolithic Peltier effect element on the same substrate. CONSTITUTION:On the surface of a substrate 11 consisting of a silicon single crystal of p-type, a rectangular n<+> layer 20a is formed partially, a single crystal part (p layer) of the lower part of this n<+> layer 20a is brought to etching by selective etching, and a vibrating reed 20 is formed. In the part of the joint of the vibrating reed 20, the first piezoelectric film (for instance, ZnO) 31a is formed, the first electrode 30a is formed thereon, the second piezoelectric film 31b is formed on this first electrode 30a, and also the second electrode 30b is formed thereon. When a current is made to flow to a metallic material 12a side from a variable current source 26, an electron carries a heat energy to the metallic material 12a from a metallic material 12b, in an n<+> layer 14, and an electron hole carries a heat energy to a metallic material 12c from the metallic material 12b, in a p<+> side, therefore, a connecting pat of the n<+> layer and the p<+> layer of the metallic material 12b is cooled by a Peltier effect.
|
