| 摘要 |
PURPOSE:To obtain the method for formation of the semiconductor element and the deposition film having improved interfacial characteristics on a multilayer constitution thin film semiconductor by a method wherein at least one layer of a valence-controlled semiconductor thin film is formed by performing a plasma CVD (chemical vapor deposition) method. CONSTITUTION:When a deposition film doped by a valence control agent, for example, is going to be formed using a deposition film forming device, having the semiconductor characteristics, doped by the valence control agent by performing the plasma CVD method heretofore in use, a suitable base 503 is placed on a supporting stand 502, a film-forming chamber 501 is evacuated and depressed through the intermediary of an exhaust pipe using an exhaust system. Then, the base is heated up, and the raw gas such as SiH4, N2O, H2 and the like and another gas such as B2H6, PH and the like, which will be turned to the valence control agent, are introduced from a gas feeding cylinder into a film-forming chamber 501 through the intermediary of a gas introducing pipe 517. Plasma is generated in the film-forming chamber 501 by a plasma generating device while the film-forming chamber is being maintained at the prescribed pressure, and an A-Si : H : O : B film is formed on the base 503. |
