| 摘要 |
PURPOSE:To simplify a structure and to obtain more high-density, three- dimensional device, by forming a first element on an Si substrate, alternately forming organic insulating films and elements comprising polycrystalline Si layers and amorphous Si layers in a multilayer mode, and using the topmost element layer as a solar cell. CONSTITUTION:A first semiconductor element is formed on the surface of a semiconductor substrate 11. Upper electrodes 16 and 17 or wirings are provided in the first semiconductor element. Second - nth semiconductor elements comprising organic insulating films 17 and 22, which bury the electrodes 16 and 17 or the wiring, and polycrystalline silicon layers 19 and amorphous silicon layers 23 are alternately formed in a multilayer mode. The upper and lower elements are electrically connected by way of through holes in the organic insulating films 18 and 22, which are provided between the upper and lower elements. The topmost semiconductor layer is formed as a solar cell in order to supply power to the semiconductor elements as the lower layer. For example, the semiconductor element at the lower layer is made to be a field effect transistor or a lateral transistor. Said organic insulating films 18 and 22 are formed with polyimide macromolecular resin and the like. |
