| 摘要 |
<p>An image sensor, is described which has a substrate (31), with first wire connections (32) formed on a first region of the substrate. A semiconductor layer (33) is formed on the first region of the substrate, covering the first wire connections and, is also formed on a second region of the substrate. A plurality of first electrodes (35) are electrically connected to the semiconductor layer in the second region, and there are second electrodes (36) having a plurality of sub-electrodes (36') electrically connected to the semiconductor layer of the second region. The plurality of sub-electrodes (36') and the first electrodes (35) are arranged to form a plurality of photo-sensing elements with the semiconductor layer between adjacent first and sub-electrodes. A second wire connection (37) extends from each first electrode (351, and electrically connects with selected of the first wire connections via through holes (C) formed in the semiconductor layer (33).</p> |
