| 摘要 |
PURPOSE:To obtain a device, through which beams are projected in the direction vertical to the surface of a substrate, by forming a projection vertical to one surface of the substrate, demarcating an active layer in the projection and shaping a recess in the active layer from the surface on the reverse side of the substrate. CONSTITUTION:N-type GaAs6 is formed to N-type AlGaAs7 on an N-type GaAs substrate 8 in an epitaxial manner. The columnar projection 6 is shaped through etching, using an SiO2 film 5 as a mask. A P layer 10 and a P<+> layer 19 are formed through the diffusion of Zn, and P-N junctions 11a, 11b are shaped. The substrate 8 is etched using the mixed liquid of NH4OH and H2O2 and an opening 17 aligning with the projection 6 is formed, and Au/Sn electrodes 9 are attached. An Au/Zn/Au electrode 4 is evaporated. The electrode film 4 on the SiO2 film 5 on the end surface of the projection functions as an internal reflecting mirror. A Cu endothermic body 1 is fused at the nose of the projection 6 by In1. When electricity is conducted, bringing a cooling body 1 to positive potential, layer beams generated near the P-N junction 11a are radiated vertically to the substrate from the opening 17, and heat generated is dissipated to a thermal conductive substance layer 3 and the endothermic body 1 from the side surface of the projection 6, thus effectively keeping an active region at a fixed temperature, then acquiring a stable optical output. |
