| 摘要 |
PURPOSE:To flatten a silicon oxide film by a method wherein an organic coating film is formed on a silicon oxide film with an uneven surface to be simultaneously etched at the specific rate using mixed gas of fluorine base compound and oxygen. CONSTITUTION:An interconnection pattern 2 is formed on a semiconductor substrate 1 and then a silicon oxide film 3 with an uneven surface is formed on the pattern 2. Furthermore, an organic coating film 5 with film thickness exceeding the unevenness step difference is formed on the surface of film 3. Next, the film 3 can be flattened by simultaneously etching the films 3 and 5 at the specific rate of 1.6/1-2.0/1 using mixed gas plasma of fluorine base compound and oxygen. Besides, the processing time can be cut down by etching the films 3 and 5 using oxygen gas plasma until the projecting part of film 3 begins to be exposed and later the mixed gas plasma of fluorine base compound and oxygen. Through these procedures, the film thickness of a conductor layer can be made even.
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