| 摘要 |
PURPOSE:To make it possible to form easily a pattern of 0.1mum dimension on an SiO2 film, by forming a resist pattern on a wafer using an inversion photo mask and a position photo-resist. CONSTITUTION:A positive-type photo-resist 13 of uniform thickness is spread on a wafer 11, and exposed by an ordinary ultraviolet ray using the inversion photo mask of a pattern to be formed. A resist pattern 13 having 1mum pattern width is formed by development, and deposition of SiO2 is achieved by sputtering. The sputtering is stopped in this process just before the positive-type photo resist 13 is subjected to just-etching, and then stripe-type grooves having 1mum pattern width are formed on an SiO2 film 12. By eliminating the remaining positive-type photo-resist 13, 1mum wide stripes can be constituted on the SiO2 film on the wafer 11.
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