| 摘要 |
PURPOSE:To make it possible to perform high speed switching, by providing a Schottky electrode, high concentration impurity region and ohmic electrode on a low concentration impurity region, which is provided in a semiconductor substrate. CONSTITUTION:On a GaAs semi-insulating substrate 2, an N<->(P<->) layer 1, which is a low concentration impurity region, whose impurity concentration is 1X10<14>-1X10<17> pieces/cm<3> and dose amount is 0-3X10<12>cm<-2>, is formed. An N<+> layer 3 is formed in a self-aligning manner with a Schottky electrode 4, which is formed on the N<->(P<->) layer 1. The N<+> layer 3 is a high concentration impurity region, whose impurity concentration is 5X10<17> pieces/cm<3> and dose amount is about 2X10<13>cm<-2>. An ohmic electrode 5 is provided on the N<+> layer 3. An electric wire 6, a phosphorus silicate glass 7 and an SiO2 layer 8 are further formed. |
