MANUFACTURE OF SEMICONDUCTOR ELEMENT

摘要

PURPOSE:To improve the variation of a boundary state by the formation of a protective film by forming a passivation protecting film and then heat treating in H2 atmosphere. CONSTITUTION:A charge transfer type solid image sensor is covered with phosphorus glass laminated by a CVD method and a passivation protective film 6 by nitrided glass. Then, it is heat treated at 400 deg.C in clean atmosphere containing 5% of H2 for 30min. The difference of a dark current due to the difference of structures under the film 6 can be removed by this treatment, the dark current level of the entire element can be lowered, thereby improving the deterioration in the characteristics due to the dark current.