| 摘要 |
PURPOSE:To etch a silicon to be etched with charged particles without loss of a silicon layer by laser emitting the silicon in an atmosphere containing NH3. CONSTITUTION:This is a method for patterning a silicon while making it react to the etching of the silicon by a low laser output. NH3 has a property to absorb a light of short wavelength such as 3,100Angstrom or shorter and decompose. When a laser is emitted to the silicon surface (400 deg.C of substrate temperature) in the NHd3, nitride film is formed on the silicon surface. Since the silicon nitride film preferably absorbs the light of 2,500Angstrom or shorter in wavelength, it can be excited by a far ultraviolet laser, the light-excited nitride film is heated to decompose etching gas containing fluorine compound to generate fluorine atoms having large reactivity, thereby etching the silicon nitride film.
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