| 摘要 |
PURPOSE:To readily assemble and process elements of flattening and die bonding of the surface of a current blocking layer by providing a clad layer of the same conductivity type as a substrate, an active layer, a clad layer of opposite conductivity type to the substrate sequentially laminated on a main flat surface including a random superlattice layer and a superlattice layer. CONSTITUTION:An N-type Ga1-xAlxAs/Ga1-x'Alx'As superlattice layer 22 is formed in a depth of 1mum from a main surface on a predetermined region of an N-type GaAs substrate 21 at a main surface side. This layer 22 has a structure that barrier layers 22a (Se-doped) of 70Angstrom thick and well layers 22b (Se-doped) of 30Angstrom thick are laminated for 100 periods. A Zn-doped random superlattice layer 23 is formed at a predetermined region of the substrate 21. The main surface of the substrate 21 including the layers 23, 22 becomes flat. An optical guide layer made of an N-type GaAlAs clad layer 24, a non-doped GaA As active layer 25, a P-type GaAlAs clad layer 26 and a P-type GaAs contact layer 27 are sequentially laminated on the flat main surface. Metal electrodes 28, 29 are formed on the layer 27 and the substrate 21, respectively. A semiconductor laser 30 becomes a refractive index guide type laser structure having a current blocking layer therein at the substrate 21 side to realize a low threshold current and a stable lateral mode operation. |
