| 摘要 |
PURPOSE:To improve the moisture resistance of a semiconductor device by forming a fluoride layer on the surface of aluminum wirings. CONSTITUTION:The surfaces of aluminum wirings 8 are treated with fluorine to form fluoride layers 11. The fluoride layers are formed, for example, by forming aluminum wirings on a semiconductor substrate, and exposing the wirings in CF4 plasma gas. This is confirmed to form an AlF3 on the surface of the wirings by CF4 plasma treatment from the result of surface analysis by an ESCA. The layer 11 is hydrophobic, and even if a crack occurs in a passivation film 9 to immerse moisture, it can prevent the moisture from arriving at the Al wirings.
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