| 摘要 |
PURPOSE:To decrease oxygen, which is included in a growing silicon thin film, to a large extent and to form the silicon thin film characterized by few crystal defects and high resistivity, by mostly removing remaining oxygen, which is attached to the inner wall of a treating furnace, the surface of a substrate and the like by the reaction of silane gas and the remaining oxygen. CONSTITUTION:The surface of a substrate 5 is cleaned for 5min by plasma sputtering of Ar. Then current conduction is stopped. In place of Ar gas, monosilane gas SiH4 is introduced into a quartz tube 1 from an introducing pipe 7. Gettering of remaining oxygen by SiH4 is performed, i.e., the remaining oxygen, which is attached to the inner wall of the quartz tube 1 and the substrate 5 due to the reaction of the SiH4 and th remaining oxygen, is removed. Then, a material, which is deposited on the surface of the substrate 5 due to the reaction of the SiH4 and the oxygen, is removed by the Ar plasma sputtering similar to said Ar plasma sputtering. Thus the surface of the substrate 5 is cleaned. Thereafter, in place of the Ar gas, SiH4 is introduced through the introducing pipe 7 again. A silicon thin film having a specified thickness is grown on the surface of the cleaned substrate 5 by vapor-phase epitaxial growing by the thermal decomposition of the SiH4.
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