| 摘要 |
PURPOSE:To form a single crystal silicon film having excellent crystalline property, by forming a first single crystal magnesia spinnel film having a specified thickness by a vapor phase epitaxial growing method on a silicon substrate, then forming a second single crystal magnesia spinnel film on said spinnel film by a molecular beam epitaxial growing method. CONSTITUTION:In a method of forming a single crystal insulating film on a silicon substrate, a first single crystal magnesia spinnel film 5 having a thickness of about 80nm is formed on said substrate as said single crystal insulating film by a vapor phase epitaxial growing method. On said first single crystal magnesia spinnel film, a second single crystal magnesia spinnel film 6 are formed by a molecular beam epitaxial growing method. Thus, the single crystal magnesia spinnel film characterized by excellent crystal property and surface flatness is formed. When a single crystal silicon film is formed on said single crystal magnesia spinnel film, the single crystal silicon film having the excellent crystalline property in comparison with the conventional case is obtained regardless of the thickness of the single crystal magnesia spinnel film.
|
