| 摘要 |
PURPOSE:To provide a switching element structure, which does not give effect to the state of non-selected switch, by connecting an electrode, which faces a floating gate through a thin oxide film, to a program line through a switching transistor that is used when the switch is changed into an ON state. CONSTITUTION:In order to turn ON this switching element, at first, a high voltage for programming, i.e., 20V, is applied to a metal wiring 49 that is connected to switching transistors 101 and 102. The same high voltage is applied to a gate 40 of the switching transistor 101, and the transistor 101 is turned ON. The potential at an N-type impurity region 38 is made high. Meanwhile, a gate 44 of the switching transistor 103 is kept at a low potential. Thus the potential of a control gate 34 is kept low. As a result, electric charge is discharged from a floating gate 32 to the N-type impurity region 38 owing to a tunnel current, in a thin oxide film 37. Then, the floating gate 32 is positively charged. Therefore, the channel of a switching element 100 is turned ON, and metal wirings 50 and 51, which are input/output lines of the switching element, are connected with each other. |
