发明名称 DRIVE CIRCUIT FOR SWITCHING SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To improve the efficiency by providing a timing circuit giving a time constant to an on-level change of a base voltage of a forward bias transistor (TR) so as to reduce the loss when the switching semiconductor element is turned on. CONSTITUTION:The timing circuit 10 is provided between an output terminal of an inverter 5 and an input terminal of an inverter 6. Further, the timing circuit 10 consists of a diode D2 for discharge connected in parallel with a time constant resistor R7 inserted between an output terminal of the inverter 5 and an input terminal of the inverter 6 and of a capacitor C2 for time constant provided between an input terminal of the inverter 6 and a connection point beta. In turning on the forward bias TR 2 to provide a forward bias to a switching semiconductor element 8, a reverse TR 3 is turned off by the level change in the control signal and the forward bias TR 2 is turned on with a delay by a time set by the time constant of the timing circuit from the level change of the control signal.
申请公布号 JPS62136918(A) 申请公布日期 1987.06.19
申请号 JP19850278748 申请日期 1985.12.10
申请人 SANSHA ELECTRIC MFG CO LTD 发明人 OKUMURA SABURO
分类号 H03K17/04;H02M3/28 主分类号 H03K17/04
代理机构 代理人
主权项
地址