发明名称 CVD THIN FILM FORMING DEVICE
摘要 PURPOSE:To prevent a wafer from being warped while preventing any foreign matters in furnace or dust from sticking on the surface of wafer by a method wherein a means to preheat the wafer before it is loaded on a wafer mounting base is arranged on a wafer loader. CONSTITUTION:A wafer fed from a loader cartridge 2 is not directly carried on to a wafer mounting base 4 in a reaction furnace 1 but once carried to a preheating part 6 to be preheated up to around 200 deg.C. The wafer 3 fed from the loader cartridge 2 is slowly heated while being carried in the tunnel type preheating part 6 toward the pate part 5 of reaction furnace 1 to be preheated up to specified temperature. The preheated wafer 3 is carried onto the wafer mounting base 4 in the reaction furnace 1 by a wafer holding means. Through these procedures, the temperature difference can be reduced to prevent the wafer 3 from being warped.
申请公布号 JPS62131521(A) 申请公布日期 1987.06.13
申请号 JP19850271303 申请日期 1985.12.04
申请人 HITACHI ELECTRONICS ENG CO LTD 发明人 TANIGUCHI KAZUO;OGURA TAKESHI;YOSHIDA AKIRA;MURAKAWA YUKIO
分类号 H01L21/205;C23C16/46;H01L21/31 主分类号 H01L21/205
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