发明名称 |
CVD THIN FILM FORMING DEVICE |
摘要 |
PURPOSE:To make the temperature distribution of wafer even and to form a CVD film with even thickness by a method wherein a flat type heat reflecting plate to form black body cavities between wafer and the plate is arranged above a wafer mounting base almost in parallel with the wafer mounted on the base. CONSTITUTION:A flat plate type heat reflecting plate 12 to form black body cavities 14 between a wafer 5 and the plate 12 is arranged above a wafer mounting base 4 almost in parallel with the wafer 5 mounted on the base 4. The plate 12 in parallel with the wafer 5 forms parallel flat plate type black body cavities 14 to buing infrared rays from the wafer 5 into equilibrium. The silicon wafer 5 almost transmits the infrared rays absorbing only a part thereof so that the infrared rays may endlessly repeat the reflection between heaters 10 and the plate 12 to heat the wafer 4 evenly. Through these procedures, the temperature distribution of wafer 5 can be made even to form a CVD film with even thickness on the wafer 5.
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申请公布号 |
JPS62131523(A) |
申请公布日期 |
1987.06.13 |
申请号 |
JP19850272079 |
申请日期 |
1985.12.03 |
申请人 |
HITACHI ELECTRONICS ENG CO LTD |
发明人 |
MURAKAWA YUKIO;TANIGUCHI KAZUO;YOSHIDA AKIRA;HIKIMA HITOSHI;TAKAMI KATSUMI |
分类号 |
H01L21/205;C23C16/44;C23C16/455;H01L21/31 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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