发明名称 CVD THIN FILM FORMING DEVICE
摘要 PURPOSE:To make the temperature distribution of wafer even and to form a CVD film with even thickness by a method wherein a flat type heat reflecting plate to form black body cavities between wafer and the plate is arranged above a wafer mounting base almost in parallel with the wafer mounted on the base. CONSTITUTION:A flat plate type heat reflecting plate 12 to form black body cavities 14 between a wafer 5 and the plate 12 is arranged above a wafer mounting base 4 almost in parallel with the wafer 5 mounted on the base 4. The plate 12 in parallel with the wafer 5 forms parallel flat plate type black body cavities 14 to buing infrared rays from the wafer 5 into equilibrium. The silicon wafer 5 almost transmits the infrared rays absorbing only a part thereof so that the infrared rays may endlessly repeat the reflection between heaters 10 and the plate 12 to heat the wafer 4 evenly. Through these procedures, the temperature distribution of wafer 5 can be made even to form a CVD film with even thickness on the wafer 5.
申请公布号 JPS62131523(A) 申请公布日期 1987.06.13
申请号 JP19850272079 申请日期 1985.12.03
申请人 HITACHI ELECTRONICS ENG CO LTD 发明人 MURAKAWA YUKIO;TANIGUCHI KAZUO;YOSHIDA AKIRA;HIKIMA HITOSHI;TAKAMI KATSUMI
分类号 H01L21/205;C23C16/44;C23C16/455;H01L21/31 主分类号 H01L21/205
代理机构 代理人
主权项
地址