| 摘要 |
PURPOSE:To cut down the manufacturing processes by a method wherein, after forming a photoresist mask to form a conductive diffused layer, a second material mask to form a conductive diffused layer, a second material mask is formed on the region wherein said conductive type diffused layer is installed by lift-off process using the photoresist mask to form a reverse conductive diffused layer on a semiconductor substrate. CONSTITUTION:After forming an N-type well 2 on a substrate 1, thick silicon oxide films 3 and thin silicon oxide films 4 are respectively formed on the surface of substrate 1 by selective oxidation process. First, a photoresist mask 5 is formed by making an opening as a region constituting an N channel MISFET. Then arsenic ion is implanted to form an N-type leading-in layer 6 on the semiconductor substrate 1. Second, overall surface is coated with an aluminium film 7 to form another aluminum film 7A as a second mask. Then boron ion is implanted to form a P-type leading-in layer 8 in the N-type well 2. Finally, the aluminium mask 7A is removed for high temperature heat- treatment to form an N-type diffused layer 6a and a P-type diffused layer 8a. |
