发明名称 APPARATUS FOR FORMING THIN FILM
摘要 PURPOSE:To forma high-quality thin film on a substrate in an electronic cyclotron resonance plasma chemical vapor deposition apparatus by generating an electric field rectangular to a magnetic field and irradiating light on the surface of a sample. CONSTITUTION:A substrate 7 is fitted on a substrate base 6 and the inside of a vacuum chamber 1 is exhausted in high vacuum and both discharge gas and reaction gas are introduced through an introduction port 9 and an introduction pipe 8, and the inside of the vacuum chamber 1 is kept in the prescribed pressure. The substrate 7 is heated at the prescribed temp. by a heater incorporated in the base 6 and magnetic field is impressed to the inside of a discharge tube 2 by conducting current to the coils 3. In this state, light is irradiated on the substrate 7 by lighting a low-pressure mercury-arc lamp 10. Then discharge is started by generating microwave in a microwave generator 4 and impressing microwave to the discharge tube 2 via a waveguide 5. Simultaneously DC voltage is impressed to the electrodes 12 and film formation is performed in such as state that the prescribed electric field is generated. Thereby film quality and orientation properties are improved in accordance with the wavelength of light and the film formation temp. is made to low temp.
申请公布号 JPS62127472(A) 申请公布日期 1987.06.09
申请号 JP19850264804 申请日期 1985.11.27
申请人 HITACHI LTD 发明人 TANAKA MASAHIRO;AZUMA KAZUFUMI;WATANABE TAKESHI;NAKATANI MITSUO
分类号 C23C16/46;C23C16/50;C23C16/511 主分类号 C23C16/46
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