| 摘要 |
PURPOSE:To obtain a longitudinal single-mode laser, which can be modulated at high speed, by growing multiple quantum well structure on one main surface of a semiconductor substrate through a buffer layer, applying an electric field between the multiple quantum well structure and the semiconductor substrate and controlling the stoppage and starting of oscillation. CONSTITUTION:An n-InP buffer layer 2, an MQW layer 2, an n-InP buffer 4 and a diffraction grating 4-1 are formed onto a (100)n-InP substrate 1, and an n-InGaAsP waveguide layer 5, an n-InGaAsP active layer 6 and a p-In clad layer 7 are grown on the diffraction grating 4-1. A light-emitting section is processed to a mesa shape, p-InP 8, n-InP 9 and a current block layer are grown, and p-InGaAsP 10 is grown continuously. Sections up to the n-InP buffer layer 4 is removed selectively adjoined to the light-emitting section and a p-type electrode 11 and n-type electrodes 12, 13 are formed, and one of a light-emitting outgoing section for an element is shaped in an inclined end surface 13 in order to remove a Fabry-Perot mode. When a section between the electrodes 11, 12 is conducted, the device is oscillated at a longitudinal single mode at an oscillation wavelength of approximately 1.3mum. |
