| 摘要 |
PURPOSE:To obtain a contact type image sensor having high performance by directly forming an amorphous silicon photodiode onto a high-concentration impurity addition region in a source (or a drain) for a polycrystalline silicon TFT for a switch circuit. CONSTITUTION:The side 15 of a drain electrode 14 is used for the ohmic contact of a metallic electrode 2, and the source side 16 is employed as one part of a photodiode. Impurities are added previously to an N<+> shape on an N channel TFT and to a P<+> type on a P channel TFT. Amorphous silicon layers 17, 18 are isolated and shaped so as to be protruded from polycrystalline silicon. A transparent electrode 19 consisting of ITO and SnO2 is extended up to a substrate as a wiring, and covers the side wall of the amorphous silicon photodiode, but an N layer and a P layer are not short-circuited by the transparent electrode, thus eliminating the need for the deposition of an insulator and the information of a window for a contactor. |
