| 摘要 |
PURPOSE:To reduce the parasitic capacitance of a semiconductor device and a single crystal semiconductor substrate, and to increase working speed by burying a first single crystal semiconductor film up to the same height as an insulating film on the substrate to a window section formed to the insulating film, shaping a polycrystalline semiconductor film onto the fist single crystal semiconductor film and irradiating the polycrystalline semiconductor film by heat rays or beams to change the polycrystalline semiconductor film into a second single crystal semiconductor film. CONSTITUTION:An insulating film 12 is formed onto the surface of a single crystal semiconductor substrate 11, a window is bored to the insulating film through photo-etching, a first single crystal semiconductor film 13 is buried, and the surface of the film 13 is flattened approximately to the surface of the insulating film 12. A polycrystalline or amorphous silicon film 14 is shaped onto the surface of the substrate through a CVD method, etc., and heat rays or beams are projected, heating the substrate 11 from the surface of the film 14 to melt the silicon film 14. The film 14 is recrystallized in a cooling process to form a second single crystal semiconductor film 15, thus shaping the flat single crystal semiconductor film 15. Accordingly, the thickness of the insulating film can be thickened, thus reducing the parasitic capacitance of the semiconductor device and a single crystal semiconductor substrate, then further increasing working speed.
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