发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes a passivating layer to reduce and stabilize the surface recombination rate. The passivating layer is of polycrystalline semiconductor material and is of the same conductivity type as that of the underlying semiconductor material. The semiconductor material of the passivating layer differs from that of the underlying semiconductor layer and has a larger energy gap than the underlying layer.
申请公布号 JPS62122183(A) 申请公布日期 1987.06.03
申请号 JP19860175822 申请日期 1986.07.28
申请人 PHILIPS GLOEILAMPENFAB:NV 发明人 JIYATSUKU RUBERI
分类号 H01L31/10;H01L21/314;H01L21/471;H01L29/51;H01L31/00;H01L31/0216;H01L31/04;H01L31/0693;H01L31/103;H01L31/11;H01L33/00;H01L33/44 主分类号 H01L31/10
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