发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device includes a passivating layer to reduce and stabilize the surface recombination rate. The passivating layer is of polycrystalline semiconductor material and is of the same conductivity type as that of the underlying semiconductor material. The semiconductor material of the passivating layer differs from that of the underlying semiconductor layer and has a larger energy gap than the underlying layer. |
申请公布号 |
JPS62122183(A) |
申请公布日期 |
1987.06.03 |
申请号 |
JP19860175822 |
申请日期 |
1986.07.28 |
申请人 |
PHILIPS GLOEILAMPENFAB:NV |
发明人 |
JIYATSUKU RUBERI |
分类号 |
H01L31/10;H01L21/314;H01L21/471;H01L29/51;H01L31/00;H01L31/0216;H01L31/04;H01L31/0693;H01L31/103;H01L31/11;H01L33/00;H01L33/44 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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