| 摘要 |
PURPOSE:To simply carry out an etching giving a complex stepped shape by a single etching work when a formed product having a fine shape is formed by etching, by changing the covering rate of a mask covering a part to be etched so as to control the etching rate. CONSTITUTION:When a member to be etched such as a metallic member, an Si wafer, a plastic or glass substrate or a semiconductor wafer is etched to different depths, the covering rate of a mask covering the part to be etched is reduced in proportion to the increase of the extent of etching and the part is etched with an etching soln. In order to change the covering rate of the mask, a mask having a striped pattern 2, 3 or a mask having a pattern in which pinholes of about 50mum diameter are distributed according to the covering rate is used. Thus, a member having different heights h1, h2, h3 is obtd. by a single etching work.
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