| 摘要 |
PURPOSE:To provide a forming method for a fine pattern formed with a pattern narrower than the hole of the first mask material on a primary material film by forming the first mask material having a hole on the primary film, then forming the second mask material on the entire surface, and selectively removing it to allow it to remain on the inner wall of the hole of the first material. CONSTITUTION:A silicon nitride film 13 is formed through a silicon oxide film 12 on a substrate 11, a resist pattern 15 having a hole 14 is formed thereon, and a thin organic film 16 is deposited on the entire surface. Then, the film 16 is etched to allow partial film 16a to remain on the inner wall of the hole 14 of the pattern 15. With the pattern 15 and the film 16a as masks the film 13 is etched to form a hole 17. Subsequently, the film 15 and the film 16a are removed, and with the film 13 as a mask a field oxide film 18 is formed.
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