| 摘要 |
PURPOSE:To enhance the integration and the quality of a semiconductor device having a capacitor by forming a silicon oxide film and a nitride film between a lower electrode and a metal oxide film to prevent a high dielectric constant metal oxide film from deteriorating. CONSTITUTION:An SiO2 film 14 is positively formed on a lower electrode 8, and an Si3N4 film 15 is formed thereon. Thus, a boundary between the film 15 and the electrode 8 is stabilized by excluding the formation of an unknown film or a natural oxide film having wrong quality to be formed, for example, in pretreating step. Since the film 15 is formed between a metal oxide film formed on the film 15 such as a Ta2O5 film 9 and the polysilicon layer 8 as the lower electrode, it can prevent the Ta film from reacting with the polysilicon layer in the step of forming the film 9 by oxidizing the Ta film and prevent the film 9 from reacting with the lower 8 by the high temperature treatment after the formation of the film 9. Therefore, it can prevent the quality such as insulation of the film 9 from deteriorating. |
